? 2010 ixys corporation, all rights reserved high-gain igbts IXGP24N60C4 ixgh24n60c4 v ces = 600v i c110 = 24a v ce(sat) 2.70v t fi(typ) = 68ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 10 a t j = 125 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.28 2.70 v t j = 125 c 1.95 v symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 56 a i c110 t c = 110c 24 a i cm t c = 25c, 1ms 130 a ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 48 a (rbsoa) clamped inductive load @ v ces p c t c = 25c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight to-220 3.0 g to-247 6.0 g ds100253(03/10) high-speed pt trench igbts advance technical information features z optimized for low switching losses z square rbsoa z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts g = gate c = collector e = emitter tab = collector tab to-247 ad (ixgh) g c e to-220ab (ixgp) tab g c e
ixys reserves the right to change limits, test conditions, and dimensions. IXGP24N60C4 ixgh24n60c4 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 10 17 s c ie s 875 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 60 pf c res 28 pf q g 64 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 7 nc q gc 28 nc t d(on) 21 ns t ri 33 ns e on 0.40 mj t d(off) 143 ns t fi 68 ns e of f 0.30 0.55 mj t d(on) 20 ns t ri 32 ns e on 0.63 mj t d(off) 130 ns t fi 118 ns e off 0.50 mj r thjc 0.65 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = i c110 , v ge = 15v v ce = 360v, r g = 10 note 2 inductive load, t j = 125c i c = i c110 , v ge = 15v v ce = 360v, r g = 10 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-220 outline terminals: 1 - gate 2 - collector 3 - emitted
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